| PART |
Description |
Maker |
| 1N4002G 1N4007G 1N4001G 1N4003G 1N4004G 1N4005G 1N |
400V, 1.0A glass passivated rectifier
1000V, 1.0A glass passivated rectifier
50V, 1.0A glass passivated rectifier
200V, 1.0A glass passivated rectifier
100V, 1.0A glass passivated rectifier
600V, 1.0A glass passivated rectifier
800V, 1.0A glass passivated rectifier
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http://
WTE[Won-Top Electronics]
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| UF3A-UF3M HS3A-HS3M UF3A |
SURFACE MOUNT HIGH EFFICIENCY (ULTRA FAST) GLASS PASSIVATED RECTIFIERS
Glass High Efficiency Rectifiers
Glass Ultrafast Recovery Rectifiers
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HY ELECTRONIC CORP.
|
| UF2A-UF2M HS2A-HS2M HS2K UF2A UF2J |
Glass Ultrafast Recovery Rectifiers
Glass High Efficiency Rectifiers
SURFACE MOUNT HIGH EFFICIENCY (ULTRA FAST) GLASS PASSIVATED RECTIFIERS
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HY ELECTRONIC CORP.
|
| 60S05-13 |
6 Amp Axial-Lead Glass Passivated Rectifier 50 - 1000 Volts Glass Passivated Chip
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Micro Commercial Compon...
|
| SZ1.5A330 SZ1.5A220 SZ1.5A240 SZ1.5A270 SZ1.5A300 |
HIGH VOLTAGE ZENER DIODES
240 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
270 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
220 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
330 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
300 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
430 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
470 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
390 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
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Solid States Devices, Inc
Solid State Devices, Inc.
SOLID STATE DEVICES INC
|
| 1N751A 1N755A 1N750A 1N757A 1N746A 1N749A 1N752A 1 |
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,5.1V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,7.5V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,4.7V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,9.1V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,4.3V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,5.6V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,6.2V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,6.8V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,8.2V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,10V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,12V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,3.3V齐纳电压，玻璃齐纳稳压二极管) 3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,3.9V齐纳电压，玻璃齐纳稳压二极管) 3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
|
ON Semiconductor
|
| RU2AG RU2BG RU2DG RU2GG RU2JG RU2KG RU2MG |
Ultra Fast Recovery Pack: DO-15
FULTRAFAST EFFICIENT GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.5A
(RU2AG - RU2MG) FULTRAFAST EFFICIENT GLASS
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Gulf Semiconductor
|
| GBL400G GBL401G GBL406G |
4.0Amp GLASS PASSIVATED BRIGGE Rectifiers GLASS PASSIVATED
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First Components International
First Components Intern...
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| 1N5393GP 1N5399GP 1N5391GP 1N5392GP 1N5394GP 1N539 |
Glass Passivated Junction Rectifier(????荤?缁???存???
Glass Passivated Junction Rectifier(钝化玻璃结型整流 结玻璃钝化整流（钝化玻璃结型整流器）
GLASS PASSIVATED JUNCTION RECTIFIER 玻璃钝化整流
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GE Security, Inc.
GE[General Semiconductor]
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| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
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PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
| 3SBP3 3SBP5 3SB8 3SBP375 3SB500 3SB200 3SB4 3SBP80 |
Fuses, 3A 250V SB GLASS LEADED SLOW BLOW ELECTRIC FUSE, 3A, 250VAC, 100A (IR), THROUGH HOLE
Fuses, 5A 250V SB GLASS LEADED SLOW BLOW ELECTRIC FUSE, 5A, 250VAC, 200A (IR), THROUGH HOLE
Fuses, 8A 250V SB GLASS SLOW BLOW ELECTRIC FUSE, 8A, 250VAC, 200A (IR), INLINE/HOLDER
Fuses, 375mA 250V SB GLASS LEADED SLOW BLOW ELECTRIC FUSE, 0.38A, 250VAC, 35A (IR), THROUGH HOLE
Fuses, 500mA 250V SB GLASS SLOW BLOW ELECTRIC FUSE, 0.5A, 250VAC, 35A (IR), INLINE/HOLDER
Fuses, 200mA 250V SB GLASS SLOW BLOW ELECTRIC FUSE, 0.2A, 250VAC, 35A (IR), INLINE/HOLDER
Fuses, 4A 250V SB GLASS SLOW BLOW ELECTRIC FUSE, 4A, 250VAC, 200A (IR), INLINE/HOLDER
Fuses, 80mA 250V SB GLASS LEADED
|
Bel Fuse, Inc.
BEL FUSE INC
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
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MDE Semiconductor
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